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| savantic semiconductor product specification silicon npn darlington power transistors 2SD1895 description with to-3pfa package high dc current gain low collector saturation voltage complement to type 2sb1255 applications power amplification optimum for 90w high-fidelity output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 140 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i cp collector current-peak 8 a t c =25 100 p c collector power dissipation 3 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn darlington power transistors 2SD1895 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =30ma ; i b =0 140 v v cesat collector-emitter saturation voltage i c =7a ;i b =7ma 2.5 v v besat base-emitter saturation voltage i c =7a ;i b =7ma 3.0 v i cbo collector cut-off current v cb =160v; i e =0 100 a i ceo collector cut-off current v ce =140v; i b =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe-1 dc current gain i c =1a ; v ce =5v 2000 h fe -2 dc current gain i c =7a ; v ce =5v 5000 30000 f t transition frequency i c =0.5a ; v ce =10v;f=1mhz 20 mhz switching times t on turn-on time 2.0 s t stg storage time 6.0 s t f fall time i c =7a; v cc =50v i b1 =-i b2 =7ma 1.2 s h fe-2 classifications q p 5000-15000 8000-30000 savantic semiconductor product specification 3 silicon npn darlington power transistors 2SD1895 package outline fig.2 outline dimensions (unindicated tolerance: 0.30mm) |
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